SemiQ previews an 830 A, 1700 V SiC half bridge module
Illustrative image: Unsplash contributor on Pexels
SemiQ will preview its Gen4 1700 V SiC half bridge module at electronica 2026, quoting 830 A current capability and RDS(on) of 1.7 mΩ. The GCMS1P7C170S4B1-N uses a standard 62 mm by 152 mm S4 package and is intended for electric vehicles, industrial drives, smart grid equipment and uninterruptible power supplies.[1]
The standard outline provides a mechanical route into existing converter platforms, although SemiQ has not yet released the current rating conditions or the switching and thermal data needed to assess an electrical replacement. Its announcement does not identify the 830 A figure as continuous or pulsed, or give the case temperature and cooling conditions behind it.[1]
Further details will be available on Alfatec’s stand A6.620, where SemiQ will also show its existing Gen3 QSiC range. That includes 1200 V half bridge modules for charging, energy storage and motor drives, with the S3 range offering a 608 A module rated at 2.4 mΩ RDS(on) and 0.07°C/W junction to case thermal resistance. Those specifications belong to the Gen3 product, rather than the new Gen4 preview.[1]
SemiQ has not announced sample availability or a production date for the Gen4 module.[1]
Sources
Abstract red light trails. Illustrative photograph. Photo: Rafael Minguet Delgado / Pexels. Photo source. Free Pexels licence.
