Infineon puts OptiMOS 7 40 V MOSFETs into mass production
Illustrative image: Laura Ockel on Unsplash
Infineon’s OptiMOS 7 40 V MOSFETs are available in mass production, targeting intermediate bus converters in 48 V systems and low voltage secondary stages in emerging 800 V DC architectures. The family is optimised for 5 V gate drive, with switching above 1 MHz supported in suitable converter topologies.[1]
Compared with the OptiMOS 6 IQE013N04LM6CGSC, Infineon reports up to 33% lower maximum RDS(on) for its IQE010N04LM7CGSC at a gate to source voltage of 4.5 V. Output charge and gate charge figures of merit improve by up to 35% in the same comparison, addressing the switching losses that become more significant as frequency rises.[1]
The IQE010N04LM7CG and IQE010N04LM7CGSC use 3.3 mm by 3.3 mm PQFN packages with the source facing the PCB and the gate connection in the centre. Both specify maximum RDS(on) of 1.0 mΩ at 10 V, while the CGSC variant supports cooling through the top of the package as well as the board.[1][2]
Infineon also offers three devices with the drain facing the PCB in 5 mm by 6 mm PQFN packages, all supporting cooling on both sides. The ISCH65N04LM7SC, ISCH69N04LM7SC and ISC011N04LM7SC specify maximum RDS(on) of 0.65 mΩ, 0.69 mΩ and 1.1 mΩ respectively at 10 V. Junction temperatures up to 175°C are supported across the family.[1]
Sources
- Infineon, OptiMOS 7 40 V launch, comparisons and availability, 3 November 2026
- Infineon, IQE010N04LM7CGSC product and package data
Colour reflected from a silicon wafer. Illustrative semiconductor photograph. Photo: Laura Ockel / Unsplash. Photo source. Free Unsplash licence.
