SemiQ adds 750 V and 1,200 V SiC MOSFETs with a separate driver source
Illustrative image: Mohamed B. on Pexels
SemiQ has added fourth generation 750 V and 1,200 V silicon carbide MOSFETs to its QSiC range, as bare dies and in TO-247-4L packages.
The packaged 750 V GP4T009A075H has a typical on resistance of 9 mΩ. The 1,200 V GP4T011A120H is specified at 11 mΩ typical and 17 mΩ maximum, measured at a junction temperature of 25°C with an 18 V gate drive and 50 A drain current.
Both packages include a separate driver source connection, keeping the gate return away from the main source current path. As the load current switches, inductance in that shared path would otherwise alter the voltage seen by the gate driver. Separating the connections reduces that interaction, provided the board layout preserves the separation through the gate loop.
SemiQ lists total switching energy of 1,491 µJ for the 1,200 V device when another GP4T011A120H provides the commutating body diode. The test uses an 800 V bus, 50 A, 2.5 Ω external gate resistance and a −4.5 V/+18 V gate swing. Those conditions give the figure a basis for comparison; a different diode, gate resistance or operating point will change the loss in an actual converter.
Maximum junction temperature is 175°C. The corresponding bare dies give module manufacturers more freedom over the interconnect and cooling arrangement than the discrete package, with the insulation and thermal design handled in the module assembly.
