Infineon SiC devices go into Eaton's solid-state transformer
Image: Infineon
Infineon is to supply silicon carbide (SiC) power devices to Eaton for use in Eaton's medium-voltage solid-state transformer (MVSST) 2.0 platform, targeted at deployment across APAC.
The companies say the collaboration addresses power conversion between the electricity grid and high-density AI data centre infrastructure, targeting emerging 800 VDC data centre power distribution architectures.
What the platform claims
According to Eaton, the MVSST 2.0 platform reduces the number of conversion stages compared with conventional architectures, which the company says improves efficiency, power density and deployment flexibility. Eaton states the platform is one of the first medium-voltage solid-state transformer platforms to achieve IEC certification.
Infineon's contribution is described as SiC power devices intended to enhance efficiency, power density and system reliability within this platform; no specific device part numbers, ratings or test conditions were disclosed in the release.
Next-generation voltage targets
Eaton and Infineon say they are also exploring future SST platforms built on 2.3 kV and 3.3 kV SiC power modules, aimed at higher system voltages for AI data centres, grid modernisation and renewable energy applications. These remain at an exploratory stage, with no platform details, timelines or performance figures given.
The announcement is framed by both companies as a response to rising power demand from AI data centres, but the release provides no independent efficiency figures, deployment dates or volume commitments beyond the stated collaboration and IEC certification claim.
