Vishay adds 650 V superjunction MOSFET power modules in SOT-227

Vishay Intertechnology has introduced four power modules in the industry-standard SOT-227 package, built around its latest 650 V superjunction MOSFET technology. The range covers three single-switch devices and one low side chopper variant that integrates a 650 V SiC diode.

According to Vishay, the superjunction MOSFETs are designed to give an optimised tradeoff between on-resistance (RDS(on)) and gate charge (Qg), balancing conduction and switching losses.

Device specifications

• VS-FC50SA65: single switch, 50 A, RDS(on) typ. 44 mΩ, Qg 167 nC
• VS-FC100SA65: single switch, 100 A, RDS(on) typ. 22 mΩ, Qg 338 nC
• VS-FC150SA65: single switch, 150 A, RDS(on) typ. 14.8 mΩ, Qg 508 nC
• VS-FC50LA65: low side chopper with integrated 650 V SiC diode, 50 A, RDS(on) typ. 45 mΩ, Qg 167 nC

All four parts carry a VDSS rating of 650 V and an operating temperature range of -55 °C to +150 °C.

Target applications and packaging

Vishay lists the modules for use as DC/DC converters and DC/AC inverters in solar inverters, hydrogen generation and fuel cell systems, HVDC auxiliary electronics, charging stations, switch mode power supplies, welding and cutting equipment, UPS, lighting, rail power supplies, and medical imaging equipment such as X-ray and MRI systems.

Vishay states that the SOT-227 package allows the devices to act as a drop-in replacement for competing solutions in existing designs, avoiding the need for PCB redesign.

Sample and production quantities of the VS-FC50SA65, VS-FC100SA65, VS-FC150SA65 and VS-FC50LA65 are available now, with lead times of 12 weeks, Vishay said.