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Alliance Memory adds industrial-temperature LPDDR4 and LPDDR4X parts

The four devices cover 4 Gb, 8 Gb and 16 Gb densities, with production quantities available and a stated eight week lead time.
Patterned silicon wafer surface. Illustrative semiconductor photograph.

Illustrative image: Laura Ockel on Unsplash

Alliance Memory has added four LPDDR4 and LPDDR4X devices spanning 4 Gb, 8 Gb and 16 Gb densities in 200 ball packages. Samples and production quantities are available, with an eight week lead time and three years of supply longevity quoted by the company.[1]

The three LPDDR4X parts operate at up to 2.133 GHz and 4,266 Mbps per pin with a 0.6 V I/O supply, covering temperatures from -40°C to +85°C. The 8 Gb AS4C512M16MD4VA-046BIN and 16 Gb AS4C1G16MD4VA-046BIN each contain one x16 channel, while the 16 Gb AS4C512M32MD4VA-046BIN has two.[1][2]

The 4 Gb MT53B128M32D1DT-053ITA instead uses LPDDR4, with a 1.1 V I/O supply and two x16 channels. Its maximum clock of 1.866 GHz supports 3,733 Mbps per pin, with operation from -40°C to +95°C. All four devices offer configurable drive strength, burst lengths of 16 and 32 and an internal sensor that adjusts self refresh with temperature.[1]

Alliance describes the range as pin compatible with numerous existing memories. That claim depends on the exact device being replaced, since ball map, channel organisation, controller timings and power sequencing must agree. LPDDR4 and LPDDR4X also use different I/O voltages, so their similar names and package sizes do not establish interchangeability.[1]

Sources

  1. Alliance Memory, LPDDR4 and LPDDR4X launch, specifications and availability, 2 November 2026
  2. Alliance Memory, 8 Gb and 16 Gb LPDDR4X data sheet

Patterned silicon wafer surface. Illustrative semiconductor photograph. Photo: Laura Ockel / Unsplash. Photo source. Free Unsplash licence.

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