IQE and Atomera begin development of RF GaN on silicon
Illustrative image: Unsplash contributor on Unsplash
A joint development programme between IQE and Atomera will investigate whether engineered silicon substrates can provide a more economical foundation for RF gallium nitride devices.
IQE will contribute its compound semiconductor epitaxy and manufacturing expertise. Atomera supplies Mears Silicon Technology, an engineered epitaxial silicon technology on which the GaN structures will be grown. The programme involves successive cycles of growth, testing and optimisation, with samples intended to support discussions with foundries, integrated device manufacturers and fabless companies.
Rodney Pelzel, IQE’s chief strategy and technology officer, said the approach had the potential to provide “a cost-effective substrate”.
The work is still at the materials development stage. RF performance and manufacturing cost are the objectives, with power semiconductor applications identified as a possible later extension of the platform.
